Dr. Jon Slaughter

 

 

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IBM Research

Dr. Jon Slaughter

Jon Slaughter is a Principal Research Staff Member and Cognitive Nonvolatile Memory Technologist at IBM Research in Albany, New York. Dr. Slaughter has 21 years of experience in the research, development, and productization of Magnetoresistive Random Access Memory (MRAM) and related technologies, with over 75 issued US patents and over 100 technical publications. During that time he has been a leader in developing new materials, devices, and processes for reliable products based on magnetic tunnel junctions, including the industry’s first commercial MRAM product in 2006 by Freescale Semiconductor, as well as the first commercial spin-transfer-torque MRAM (STT-MRAM) and first STT-MRAM product with perpendicular MTJ technology in 2013 and 2017 by Everspin Technologies, where he was Vice President of Technology R&D. He began working on MRAM technology at Motorola in 1996 under a three-year DARPA contract, part of a larger DARPA program that also stimulated MRAM development at Honeywell and IBM. The Motorola program led directly to the commercial products shipped by Freescale Semiconductor and Everspin Technologies, as well as the aerospace products delivered by Honeywell. The IBM MRAM program is credited with many firsts, including the invention of spin-torque-transfer switching, and continues to be a world leader in MRAM technology. Dr. Slaughter received his bachelor’s degree in physics and mathematics from the University of Wisconsin, River Falls, and doctorate in physics from Michigan State University, where we won the Sherwood K. Haynes Award for his work on multilayered magnetic structures.